Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
Identifieur interne : 000438 ( Main/Repository ); précédent : 000437; suivant : 000439Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
Auteurs : RBID : Pascal:14-0004089Descripteurs français
- Pascal (Inist)
- Schéma équivalent, Caractéristique courant tension, Microscopie électronique balayage, Spectre SIMS, Etat électronique surface, Passivation, Densité porteur charge, Spectre résolution temporelle, Photoluminescence, Durée vie porteur charge, Aluminium Indium Phosphure Mixte, Arséniure de gallium, Nanofil, GaAs, Microscopie capacité balayage.
English descriptors
- KwdEn :
- Aluminium Indium Phosphides Mixed, Carrier density, Carrier lifetime, Equivalent circuits, Gallium arsenides, IV characteristic, Nanowires, Passivation, Photoluminescence, Scanning capacitance microscopy, Scanning electron microscopy, Secondary ion mass spectra, Surface electron state, Time resolved spectra.
Abstract
Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 55% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25 x improvement in carrier lifetime upon passivation. The fabrication and passivation methods can be easily implemented into future optoelectronic applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires</title><author><name sortKey="Chia, A C E" uniqKey="Chia A">A. C. E. Chia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University</s1><s2>Hamilton, ON L8S 4L7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Hamilton, ON L8S 4L7</wicri:noRegion></affiliation></author><author><name sortKey="Tirado, M" uniqKey="Tirado M">M. Tirado</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratorio de Nanomateriales y de Propiedades Dieléctricas, Departamento de Física, FACET, Universidad Nacional de Tucumán, Avenida Independencia 1800</s1><s2>4000 Tucumán</s2><s3>ARG</s3><sZ>2 aut.</sZ></inist:fA14><country>Argentine</country><wicri:noRegion>4000 Tucumán</wicri:noRegion></affiliation></author><author><name sortKey="Thouin, F" uniqKey="Thouin F">F. Thouin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Université de Montréal</s1><s2>Montreal, QC H3C 3J7</s2><s3>CAN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Leonelli, R" uniqKey="Leonelli R">R. Leonelli</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Université de Montréal</s1><s2>Montreal, QC H3C 3J7</s2><s3>CAN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Comedi, D" uniqKey="Comedi D">D. Comedi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Laboratorio de Física del Sólido, Departamento de Física, FACET, Universidad Nacional de Tucumán, Avenida Independencia 1800</s1><s2>4000 Tucumán</s2><s3>ARG</s3><sZ>5 aut.</sZ></inist:fA14><country>Argentine</country><wicri:noRegion>4000 Tucumán</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)</s1><s3>ARG</s3><sZ>5 aut.</sZ></inist:fA14><country>Argentine</country><wicri:noRegion>Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)</wicri:noRegion></affiliation></author><author><name sortKey="Lapierre, R R" uniqKey="Lapierre R">R. R. Lapierre</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University</s1><s2>Hamilton, ON L8S 4L7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Hamilton, ON L8S 4L7</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0004089</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0004089 INIST</idno><idno type="RBID">Pascal:14-0004089</idno><idno type="wicri:Area/Main/Corpus">000367</idno><idno type="wicri:Area/Main/Repository">000438</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Indium Phosphides Mixed</term><term>Carrier density</term><term>Carrier lifetime</term><term>Equivalent circuits</term><term>Gallium arsenides</term><term>IV characteristic</term><term>Nanowires</term><term>Passivation</term><term>Photoluminescence</term><term>Scanning capacitance microscopy</term><term>Scanning electron microscopy</term><term>Secondary ion mass spectra</term><term>Surface electron state</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Schéma équivalent</term><term>Caractéristique courant tension</term><term>Microscopie électronique balayage</term><term>Spectre SIMS</term><term>Etat électronique surface</term><term>Passivation</term><term>Densité porteur charge</term><term>Spectre résolution temporelle</term><term>Photoluminescence</term><term>Durée vie porteur charge</term><term>Aluminium Indium Phosphure Mixte</term><term>Arséniure de gallium</term><term>Nanofil</term><term>GaAs</term><term>Microscopie capacité balayage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 55% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25 x improvement in carrier lifetime upon passivation. The fabrication and passivation methods can be easily implemented into future optoelectronic applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>CHIA (A. C. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>TIRADO (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>THOUIN (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEONELLI (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>COMEDI (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>LAPIERRE (R. R.)</s1></fA11><fA14 i1="01"><s1>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University</s1><s2>Hamilton, ON L8S 4L7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratorio de Nanomateriales y de Propiedades Dieléctricas, Departamento de Física, FACET, Universidad Nacional de Tucumán, Avenida Independencia 1800</s1><s2>4000 Tucumán</s2><s3>ARG</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Université de Montréal</s1><s2>Montreal, QC H3C 3J7</s2><s3>CAN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Laboratorio de Física del Sólido, Departamento de Física, FACET, Universidad Nacional de Tucumán, Avenida Independencia 1800</s1><s2>4000 Tucumán</s2><s3>ARG</s3><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)</s1><s3>ARG</s3><sZ>5 aut.</sZ></fA14><fA20><s2>105026.1-105026.8</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000505888710260</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0004089</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 55% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25 x improvement in carrier lifetime upon passivation. 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